Thin film transistor, manufacturing method thereof, and display device having the same

ABSTRACT

A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119 to KoreanPatent Application No. 10-2016-0147004, filed on Nov. 4, 2016, in theKorean Intellectual Property Office, the disclosure of which isincorporated by reference herein in its entirety.

TECHNICAL FIELD

Exemplary embodiments of the present invention relate to a thin filmtransistor, a manufacturing method thereof, and a display device havingthe same.

DISCUSSION OF THE RELATED ART

Thin film transistors may be used as switching devices in displaydevices such as liquid crystal display devices and organiclight-emitting display devices. A transfer of current or a leakage ofcurrent in thin film transistors may depend on the material and statusof a channel layer along which charge carriers move.

When a thin film transistor is included in a transparent display devicein which light is irradiated onto the back surface of a display panel,characteristics of the channel layer may be changed by the lightirradiated onto the back surface of the display panel. Therefore, as theluminance of the display panel increases, a leakage current may begenerated as the level of an off current of the thin film transistorincreases.

SUMMARY

According to an exemplary embodiment of the present invention, a thinfilm transistor includes a first blocking layer disposed on a substrate,and an active pattern disposed on the first blocking layer. The activepattern includes a source region, a drain region, and a channel regiondisposed between the source region and the drain region. The thin filmtransistor further includes a gate electrode disposed on the activepattern. The channel region corresponds to a portion of the activepattern overlapped by the gate electrode. The thin film transistoradditionally includes a source electrode connected to the source region,and a drain electrode connected to the drain region. The active patternincludes a first part and a second part. The first part partiallyoverlaps with the first blocking layer, and the first part and thesecond part have different thicknesses from each other.

In an exemplary embodiment of the present invention, the second part ofthe active pattern does not overlap with the first blocking layer.

In an exemplary embodiment of the present invention, a thickness of thefirst part of the active pattern is less than a thickness of the secondpart of the active pattern.

In an exemplary embodiment of the present invention, the drain regionpartially overlaps with the first blocking layer.

In an exemplary embodiment of the present invention, the active patternfurther includes a drain-channel contact part disposed between the drainregion and the channel region. The drain-channel contact part overlapswith the first blocking layer.

In an exemplary embodiment of the present invention, the drain-channelcontact part is covered by the first blocking layer to block light thatis incident onto a surface of the substrate, on which the active patternis not disposed.

In an exemplary embodiment of the present invention, the drain-channelcontact part partially extends into the channel region from a point atwhich the channel region and the drain region are in contact with eachother.

In an exemplary embodiment of the present invention, the drain-channelcontact part has a width of about 3.5 μm or more.

In an exemplary embodiment of the present invention, a thin filmtransistor further includes a second blocking layer partiallyoverlapping with the drain region and the channel region. The firstblocking layer partially overlaps with the source region and the channelregion.

In an exemplary embodiment of the present invention, the first blockinglayer and the second blocking layer are disposed in the same layer.

In an exemplary embodiment of the present invention, the active patternfurther includes a source-channel contact part disposed between thesource region and the channel region, and a drain-channel contact partdisposed between the drain region and the channel region. Thesource-channel contact part overlaps with the first blocking layer, andthe drain-channel contact part overlaps with the second blocking layer.

In an exemplary embodiment of the present invention, the source-channelcontact part is covered by the first blocking layer to block light thatis incident onto a surface of the substrate, on which the active patternis not disposed, and the drain-channel contact part is covered by thesecond blocking layer to block light that is incident onto the firstsurface of the substrate.

In an exemplary embodiment of the present invention, the source-channelcontact part partially extends into the channel region from a point atwhich the channel region and the source region are in contact with eachother, and the drain-channel contact part partially extends into thechannel region from a point at which the channel region and the drainregion are in contact with each other.

In an exemplary embodiment of the present invention, each of thesource-channel contact part and the drain-channel contact part has awidth of about 3.5 μm or more.

In an exemplary embodiment of the present invention, the first blockinglayer overlaps with the channel region, the source region, and the drainregion.

In an exemplary embodiment of the present invention, the first blockinglayer includes a metal.

According to an exemplary embodiment of the present invention, a methodof manufacturing a thin film transistor, the method includes forming ablocking layer on a substrate, forming a buffer layer over the blockinglayer, and forming a semiconductor layer on the buffer layer, thesemiconductor layer including a first part and a second part. The firstpart and the second part have different thicknesses from each other. Themethod further includes forming a gate insulating layer over thesemiconductor layer, forming a gate electrode covering a region of thesemiconductor layer on the gate insulating layer, and forming an activepattern by doping impurities on the substrate on which the gateelectrode is formed. The active pattern includes a source region, adrain region, and a channel region disposed between the source regionand the drain region. The method additionally includes forming a sourceelectrode connected to the source region, and forming a drain electrodeconnected to the drain region.

In an exemplary embodiment of the present invention, the forming of thesemiconductor layer includes coating the buffer layer with asemiconductor material layer, and performing a planarization process onthe semiconductor material layer.

In an exemplary embodiment of the present invention, the first part ofthe semiconductor layer overlaps with the blocking layer, and the secondpart of the semiconductor layer does not overlap with the blockinglayer.

In an exemplary embodiment of the present invention, a thickness of thefirst part of the semiconductor layer is less than a thickness of thesecond part of the semiconductor layer.

According to an exemplary embodiment of the present invention, a displaydevice includes a display element, and a thin film transistor connectedto the display element. The thin film transistor includes a firstblocking layer disposed on a substrate, and an active pattern disposedon the first blocking layer. The active pattern includes a sourceregion, a drain region, and a channel region disposed between the sourceregion and the drain region. The display device further includes a gateelectrode disposed on the active pattern. The channel region correspondsto a portion of the active pattern overlapping by the gate electrode.The display device additionally includes a source electrode connected tothe source region, and a drain electrode connected to the drain region.The active pattern includes a first part and a second part. The firstpart partially overlaps with the first blocking layer, and the firstpart and the second part have different thicknesses from each other.

In an exemplary embodiment of the present invention, the second part ofthe active pattern does not overlap with the first blocking layer.

In an exemplary embodiment of the present invention, the drain regionpartially overlaps with the first blocking layer.

In an exemplary embodiment of the present invention, the active patternfurther includes a drain-channel contact part disposed between the drainregion and the channel region. The drain-channel contact part overlapswith the first blocking layer.

In an exemplary embodiment of the present invention, the drain-channelcontact part is covered by the first blocking layer to block light thatis incident onto a surface of the substrate, on which the active patternis not disposed.

In an exemplary embodiment of the present invention, the drain-channelcontact part partially extends into the channel region from a point atwhich the channel region and the drain region are in contact with eachother.

In an exemplary embodiment of the present invention, the drain-channelcontact part has a width of about 3.5 μm or more.

In an exemplary embodiment of the present invention, the display devicefurther includes a second blocking layer partially overlapping with thedrain region and the channel region. The first blocking layer partiallyoverlaps with the source region and the channel region.

In an exemplary embodiment of the present invention, the first blockinglayer and the second blocking layer are disposed in the same layer.

In an exemplary embodiment of the present invention, the active patternfurther includes a source-channel contact part disposed between thesource region and the channel region, and a drain-channel contact partdisposed between the drain region and the channel region. Thesource-channel contact part overlaps with the first blocking layer, andthe drain-channel contact part overlaps with the second blocking layer.

In an exemplary embodiment of the present invention, the source-channelcontact part is covered by the first blocking layer to block light thatis incident onto a surface of the substrate, on which the active patternis not disposed, and the drain-channel contact part is covered by thesecond blocking layer to block light that is incident onto the surfaceof the substrate, on which the active pattern is not disposed.

In an exemplary embodiment of the present invention, the source-channelcontact part partially extends into the channel region from a point atwhich the channel region and the source region are in contact with eachother, and the drain-channel contact part partially extends into thechannel region from a point at which the channel region and the drainregion are in contact with each other.

In an exemplary embodiment of the present invention, each of thesource-channel contact part and the drain-channel contact part has awidth of about 3.5 μm or more.

In an exemplary embodiment of the present invention, the first blockinglayer overlaps with the channel region, the source region, and the drainregion.

In an exemplary embodiment of the present invention, the display elementincludes a first electrode connected to the drain electrode of the thinfilm transistor, an emitting layer disposed on the first electrode, anda second electrode disposed on the emitting layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the present invention will become moreapparent by describing in detail exemplary embodiments thereof, withreference to the accompanying drawings, in which:

FIG. 1 is a plan view illustrating a thin film transistor according toan exemplary embodiment of the present invention.

FIG. 2 is a sectional view taken along line I-I′ of FIG. 1 according toan exemplary embodiment of the present invention.

FIGS. 3A to 3D are sectional views illustrating a manufacturing methodof the thin film transistor of FIG. 1 according to an exemplaryembodiment of the present invention.

FIG. 4 is a sectional view illustrating a thin film transistor accordingto an exemplary embodiment of the present invention.

FIG. 5 is a sectional view illustrating a thin film transistor accordingto an exemplary embodiment of the present invention.

FIG. 6 is a graph illustrating current (I_(D)) between a drain electrodeand a source electrode with respect to gate voltage (V_(G)) in aconventional thin film transistor and thin film transistors according toaccording to an exemplary embodiment of the present invention.

FIG. 7 is a diagram illustrating a display device according to anexemplary embodiment of the present invention.

FIG. 8 is a circuit diagram illustrating a pixel shown in FIG. 7according to an exemplary embodiment of the present invention.

FIG. 9 is a plan view implementing the pixel of FIG. 8, whichillustrates positions of thin film transistors, according to anexemplary embodiment of the present invention.

FIG. 10 is a plan view illustrating in detail the pixel of FIG. 9according to an exemplary embodiment of the present invention.

FIG. 11 is a sectional view taken along line II-II′ of FIG. 10 accordingto an exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments of the present invention will be described morefully hereinafter with reference to the accompanying drawings. It is tobe understood that the present invention may, however, be embodied indifferent forms and thus should not be construed as being limited to theexemplary embodiments set forth herein. In the figures, like referencenumerals may refer to like elements, and thus repetitive descriptionsmay be omitted.

In the drawings, the thickness of certain lines, layers, components,elements or features may be exaggerated for clarity. As used herein, thesingular forms are intended to include the plural forms as well, unlessthe context clearly indicates otherwise.

It will be understood that when an element or layer is referred to asbeing “on” another element or layer, the element or layer may bedirectly on another element or layer, or intervening elements or layersmay be present.

FIG. 1 is a plan view illustrating a thin film transistor according toan exemplary embodiment of the present invention. FIG. 2 is a sectionalview taken along line I-I′ of FIG. 1 according to an exemplaryembodiment of the present invention. In FIG. 2, for convenience ofdescription, the illustration of a source electrode and a drainelectrode is omitted to show an arrangement of a gate electrode GE, anactive pattern ACT, and a blocking layer SDL.

Referring to FIGS. 1 and 2, the thin film transistor according to anexemplary embodiment of the present invention includes a gate electrodeGE, an active pattern ACT, a source electrode SE, a drain electrode DE,and a blocking layer SDL, which are all provided on a substrate SUB.

The substrate SUB may be made of an insulative material such as glass,organic polymer, or quartz. In addition, the substrate SUB may be madeof a flexible material to be bendable or foldable. The substrate SUB maybe a single-layered structure or a multi-layered structure.

For example, the substrate SUB may include at least one of polystyrene,polyvinyl alcohol, polymethyl methacrylate, polyethersulfone,polyacrylate, polyetherimide, polyethylene naphthalate, polyethyleneterephthalate, polyphenylene sulfide, polyarylate, polyimide,polycarbonate, triacetate cellulose, and cellulose acetate propionate.However, the aforementioned material that may constitute the substrateSUB may be variously changed.

The blocking layer SDL may be provided on the substrate SUB. Theblocking layer SDL may be made of a conductive material, e.g., a metal.The blocking layer SDL may include of a single metal, but may includetwo or more kinds of metals, alloy of two or more kinds of metals,and/or the like. In addition, the blocking layer SDL may include asingle layer or multiple layers. The blocking layer SDL may block lightincident onto the back surface of the substrate SUB.

A buffer layer BFL may be provided on the blocking layer SDL. The bufferlayer BFL may be made of an organic insulating material or inorganicinsulating material. The inorganic insulating material may include asilicon oxide or silicon nitride.

A semiconductor layer may be provided in the form of a thin film on thebuffer layer BFL. The semiconductor layer may be a semiconductormaterial that is undoped or doped with impurities. The semiconductorlayer may include the active pattern ACT including a source region SA, adrain region DA, and a channel region CA provided between the sourceregion SA and the drain region DA. The active pattern ACT may be asemiconductor pattern made of poly-silicon, amorphous silicon, oxidesemiconductor, or the like. The channel region CA is a semiconductorpattern undoped with impurities, and may be an intrinsic semiconductor.The source region SA and the drain region DA may be semiconductorpatterns doped with impurities. The impurities may include an n-typeimpurity, a p-type impurity, and other impurities such as other metals.

A gate insulating layer GI may be provided over the active pattern ACT.The gate insulating layer GI may be made of an inorganic insulatingmaterial including a silicon oxide or silicon nitride, but the presentinvention is not limited thereto. For example, the gate insulating layerGI may be made of an organic insulating material.

The gate electrode GE covering the channel region CA of the activepattern ACT may be provided on the gate insulating layer GI. The gateelectrode GE may be made of a conductive material, e.g., a metal. Thegate electrode GE may be used as an anti-doping layer that blocks theactive pattern ACT from being doped with impurities. Accordingly, thegate electrode GE may prevent the channel region CA of the activepattern ACT from being doped with impurities.

An interlayer insulating layer may be provided over the gate electrodeGE.

The source electrode SE and the drain electrode DE may be provided onthe interlayer insulating layer.

The source electrode SE may be provided on the active pattern ACT tocover at least a portion of the active pattern ACT. The source electrodeSE may be connected to the source region SA through a contact holepassing through the gate insulating layer GI and the interlayerinsulating layer.

The drain electrode DE may be provided on the active pattern ACT tocover at least a portion of the active pattern ACT. The drain electrodeDE may be spaced apart from the source electrode SE at a predetermineddistance. The drain electrode DE may be connected to the drain region DAthrough a contact hole passing through the gate insulating layer GI andthe interlayer insulating layer.

In an exemplary embodiment of the present invention, from a plan view,the blocking layer SDL may partially overlap with the drain region DA.In addition, from a plan view, the blocking layer SDL may partiallyoverlap with the channel region CA.

A drain-channel contact part DCC may be disposed between the channelregion CA and the drain region DA. The drain-channel contact part DCC isa region partially extending into the channel region CA in a widthdirection from a point at which the channel region CA and the drainregion DA are in contact with each other. In addition, the drain-channelcontact part DCC may be a portion of the active pattern ACT overlappingwith the blocking layer SDL. The drain-channel contact part DCC has awidth of about 3.5 μm or more.

To block light that is incident onto the back surface of the substrateSUB, e.g., the surface on which the active pattern ACT is not provided,the drain-channel contact part DCC may be overlapped by the blockinglayer SDL. In other words, light from the drain channel contact part DCCis blocked. Accordingly, the light may be blocked from being incidentonto the drain-channel contact part DCC by the blocking layer SDL.

In general, as the drain-channel contact part DCC is impacted by lightincident from the outside environment, characteristics of thedrain-channel contact part DCC may be impacted.

If light is incident onto the front surface of the substrate SUB, onwhich the active pattern ACT is provided, the gate electrode GE providedon the active pattern ACT blocks the light from being incident to thedrain-channel contact part DCC. Thus, the drain-channel contact part DCCmight not be impacted by the light. Therefore, in this case, thecharacteristics of the drain-channel contact part DCC might not beimpacted.

In addition, in the case when the light is incident onto the backsurface of the substrate SUB, if any component that blocks the light isnot provided under the active pattern ACT, the drain-channel contactpart DCC may be directly exposed to the light. Therefore, as thedrain-channel contact part DCC reacts to the light, a level of an offcurrent of the thin film transistor may increase, and thus, a leakagecurrent may be generated.

In an exemplary embodiment of the present invention, the blocking layerSDL may be provided between the drain region DA and the channel regionCA, so that light provided from the back surface of the substrate SUBcan be blocked from being incident onto the drain-channel contact partDCC. In other words, the blocking layer SDL may partially overlap thedrain region DA and the charnel region CA to block the light from beingincident onto the drain-channel contact part DCC. Accordingly, theleakage current of the thin film transistor caused by light incidentonto the back surface of the substrate SUB may be minimized.

The blocking layer SDL may have various shapes that may block light,which is provided from the back surface of the substrate SUB, from beingincident onto the drain-channel contact part DCC. In an exemplaryembodiment of the present invention, from a plan view, the blockinglayer SDL may have a quadrangular shape, but the present invention isnot limited thereto. For example, the blocking layer SDL may have apolygonal shape or a circular shape.

FIGS. 3A to 3D are sectional views illustrating a manufacturing methodof the thin film transistor of FIG. 1 according to an exemplaryembodiment of the present invention.

Referring to FIG. 3A, a blocking layer SDL is provided on the substrateSUB.

The blocking layer SDL may be formed by forming a conductive layer usinga method of depositing a conductive material on the substrate SUB andpatterning the conductive layer through a process such asphotolithography. The conductive material may include, for example, asingle kind or several kinds of metals, or any alloy thereof.

Referring to FIG. 3B, a buffer layer BFL and a semiconductor materiallayer SML′ are formed over the blocking layer SDL.

The buffer layer BFL may be formed by depositing an insulating materialon the front surface of the substrate SUB and the blocking layer SDL.The semiconductor material layer SML′ may be made of, for example,amorphous silicon. The semiconductor material layer SML′ may be formedby depositing the amorphous silicon on a front surface of the bufferlayer BFL.

Referring to FIG. 3C, a semiconductor layer SML having differentthicknesses may be formed by performing a planarization process on thesemiconductor material layer (see SML′ of FIG. 3B). The planarizationprocess may be performed through chemical mechanical polishing (CMP), orthe like.

The semiconductor layer SML subjected to the planarization process mayinclude a first part W1 and a second part W2, which both havethicknesses different from each other. The first part W1 may be a regionthat does not overlap with the blocking layer SDL, and the second partW2 may be a region that overlaps with the blocking layer SDL. Thethickness of the first part W1 may be greater than that of the secondpart W2.

Referring to FIG. 3D, a gate insulating layer GI is formed on thesemiconductor layer (see, e.g., SML of FIG. 3C).

Subsequently, a gate electrode GE is formed on the gate insulating layerGI.

Continuously, the substrate SUB, on which the gate electrode GE isformed, is doped with impurities. The semiconductor layer SMLoverlapping with the gate electrode GE may become a channel region CAundoped with the impurities. The regions of the semiconductor layer SMLthat are doped with impurities may become the source region SA and thedrain region DA.

A portion the semiconductor layer SML that is connected to one end ofthe channel region CA and does not overlap with the gate electrode GEmay become the source region SA. In addition, another portion of thesemiconductor layer SML that is connected to the other end opposite tothe one end of the channel region CA and does not overlap with the gateelectrode GE may become the drain region DA. The source region SA, thedrain region DA, and the channel region CA provided between the sourceregion SA and the drain region DA constitute an active pattern (see,e.g., ACT of FIG. 1).

From a plan view, the channel region CA may partially overlap with theblocking layer SDL. Therefore, the channel region CA may be divided intothe first part W1 that does not overlap with the blocking layer SDL andthe second part W2 that overlaps with the blocking layer SDL. Thethickness of the first part W1 may be greater than the thickness of thesecond part W2.

From a plan view, the drain region DA may partially overlap with theblocking layer SDL. Therefore, the drain region DA may include the firstpart W1 that does not overlap with the blocking layer SDL and the secondpart W2 that overlaps with the blocking layer SDL. The thickness of thefirst part W1 may be greater than the thickness of the second part W2.The first part W1 of the drain region DA may have substantially the samethickness as the first part W1 of the channel region CA, and the secondpart W2 of the drain region DA may have substantially the same thicknessas the second part W2 of the channel region CA.

A drain-channel contact part DCC may be disposed between the drainregion DA and the channel region CA. The drain-channel contact part DCCmay be a region partially extending into the channel region CA from apoint at which the channel region CA and the drain region DA are incontact with each other. In addition, the drain-channel contact part DCCmay be a portion of the active pattern ACT overlapping with the blockinglayer SDL. The drain-channel contact part DCC has a width of about 3.5μm or more.

The drain-channel contact part DCC may be covered by the blocking layerSDL. Therefore, when light is incident onto the back surface of thesubstrate SUB, e.g., the surface on which the active pattern ACT is notprovided, the light might not be provided to the drain-channel contactpart DCC.

An interlayer insulating layer may be provided on the substrate SUB onwhich the gate electrode GE is provided. For example, the interlayerinsulating layer may be provided on the gate electrode GE.

A source electrode (see, e.g., SE of FIG. 1) and a drain electrode (see,e.g., DE of FIG. 1), which are spaced apart from each other at apredetermined distance, may be provided on the interlayer insulatinglayer.

FIG. 4 is a sectional view illustrating a thin film transistor accordingto an exemplary embodiment of the present invention. In the thin filmtransistor according to an exemplary embodiment of the presentinvention, differences from the thin film transistor according to anabove-described exemplary embodiment of the present invention may bedescribed to avoid redundancy. Portions and elements that are notparticularly described in the present exemplary embodiment may beassumed to be similar to portions and elements relating to the thin filmtransistor according to the above-described exemplary embodiments. Inaddition, identical reference numerals may refer to identicalcomponents, and similar reference numerals may refer to similarcomponents. In FIG. 4, for convenience of description, an arrangementrelation of a gate electrode, an active pattern, and a blocking layer isillustrated.

Referring to FIG. 4, the thin film transistor according to an exemplaryembodiment of the present invention includes a gate electrode GE, achannel region CA, a source region SA, a drain region DA, a firstblocking layer SDL1, and a second blocking layer SDL2, which areprovided on a substrate SUB. The channel region CA, the source regionSA, and the drain region DA may constitute an active pattern (see, e.g.,ACT of FIG. 1).

The first blocking layer SDL1 may be provided on the same layer as thesecond blocking layer SDL2. From a plan view, the first blocking layerSDL1 may partially overlap with the source region SA. In addition, thefirst blocking layer SDL1 may partially overlap with the channel regionCA of the active pattern ACT.

A source-channel contact part SCC may be disposed between the sourceregion SA and the channel region CA. The source-channel contact part SCCmay be a region partially extending into of the channel region CA from apoint at which the channel region CA and the source region SA are incontact with each other. In addition, the source-channel contact partSCC may be a portion the active pattern ACT overlapping with the firstblocking layer SDL1. The source-channel contact part SCC may have awidth of about 3.5 μm or more.

To block light that is incident onto the back surface of the substrateSUB, e.g., the surface on which the active pattern ACT is not provided,the source-channel contact part SCC may be overlapped by the firstblocking layer SDL1. In other words, light from the source-channelcontact part SCC is blocked. Accordingly, the light may be blocked frombeing incident onto the source-channel contact part SCC by the firstblocking layer SDL1.

From a plan view, the second blocking layer SDL2 may partially overlapwith the drain region DA. In addition, the second blocking layer SDL2may partially overlap with the channel region CA of the active patternACT.

A drain-channel contact part DCC may be disposed between the drainregion DA and the channel region CA. The drain-channel contact part DCCmay be a region partially extending into the channel region CA from apoint at which the channel region CA and the drain region DA are incontact with each other. In addition, the drain-channel contact part DCCmay be a portion of the active pattern ACT overlapping with the secondblocking layer SDL2. The drain-channel contact part DCC may have thesame width as the source-channel contact part SCC, but the presentinvention is not limited thereto. For example, the drain-channel contactpart DCC and the source-channel contact part SCC may have differentwidths from each other.

To block light, which is incident on the back surface of the substrateSUB, from the drain-channel contact part DCC, the drain-channel contactpart DCC may be overlapped by the second blocking layer SDL2.Accordingly, the light may be blocked from being incident onto thedrain-channel contact part DCC by the second blocking layer SDL2.

FIG. 5 is a sectional view illustrating a thin film transistor accordingto an exemplary embodiment of the present invention. In the thin filmtransistor according to an exemplary embodiment of the presentinvention, differences from the thin film transistor according to anabove-described exemplary embodiment of the present invention may bedescribed to avoid redundancy. Portions and elements that are notparticularly described in the present exemplary embodiment may besimilar to portions and elements relating to the thin film transistoraccording to the above-described exemplary embodiment. In addition,identical reference numerals may refer to identical components, andsimilar reference numerals may refer to similar components. In FIG. 5,for convenience of description, an arrangement relation of a gateelectrode, an active pattern, and a blocking layer is illustrated.

Referring to FIG. 5, the thin film transistor, according to an exemplaryembodiment of the present invention, includes a gate electrode GE, achannel region CA, a source region SA, a drain region DA, and a blockinglayer SDL, which are all provided on a substrate SUB. The channel regionCA, the source region SA, and the drain region DA may constitute anactive pattern (see, e.g., ACT of FIG. 1).

The blocking layer SDL may be disposed on the substrate SUB and underthe source region SA, the channel region CA, and the drain region DA.From a plan view, the blocking layer SDL may partially overlap with thesource region SA, the channel region CA, and the drain region DA.Therefore, when light is incident onto the back surface of the substrateSUB, e.g., the surface on which the active pattern ACT is not provided,the light may be blocked by the blocking layer SDL and, hence, might notbe provided to the active pattern ACT. The blocking layer SDL completelycovers a drain-channel contact part DCC disposed between the drainregion DA and the channel region CA, so that the light may be blockedfrom being incident onto the drain-channel contact part DCC. Inaddition, the blocking layer SDL completely covers a source-channelcontact part SCC disposed between the source region SA and the channelregion CA, so that the light may be blocked from being incident onto thesource-channel contact part SCC.

FIG. 6 is a graph illustrating current (I_(D)) between a drain electrodeand a source electrode with respect to gate voltage (V_(G)) in aconventional thin film transistor and thin film transistors according toaccording to an exemplary embodiment of the present invention.

In FIG. 6, Comparative Example represents measurement values of anexisting thin film transistor when light is not irradiated onto the backsurface of a substrate, and Comparative Example′ represents measurementvalues of the existing thin film transistor when light is irradiatedonto the back surface of the substrate.

Embodiment 1 represents measurement values of a thin film transistoraccording to an exemplary embodiment of the present invention when lightis not irradiated onto the back surface of a substrate. Embodiment 1′represents measurement values of the thin film transistor according tothe exemplary embodiment of the present invention when light isirradiated onto the back surface of the substrate. The thin filmtransistor according to Embodiment 1 and Embodiment 1′ includes adrain-channel contact part having a width of about 2.5 μm.

Embodiment 2 represents measurement values of a thin film transistoraccording to an exemplary embodiment of the present invention when lightis not irradiated onto the back surface of a substrate. Embodiment 2′represents measurement values of the thin film transistor according tothe exemplary embodiment of the present invention when light isirradiated onto the back surface of the substrate. The thin filmtransistor according to Embodiment 2 and Embodiment 2′ includes adrain-channel contact part having a width of about 3.5 μm.

Embodiment 3 represents measurement values of a thin film transistoraccording to an exemplary embodiment of the present invention when lightis not irradiated onto the back surface of a substrate. Embodiment 3′represents measurement values of the thin film transistor according tothe exemplary embodiment of the present invention when light isirradiated onto the back surface of a substrate.

Referring to FIG. 6, when light is not irradiated onto the back surfaceof the substrate, graphs of the existing thin film transistor and thethin film transistors according to exemplary embodiments of the presentinvention are similar to each other.

When light is irradiated onto the back surface of the substrate, it hasbeen observed that the level of an off current of the existing thin filmtransistor increases. This is because the existing thin film transistordoes not include a separate component that blocks the light (e.g., ablocking layer) under an active pattern. In addition, in the thin filmtransistors according to the exemplary embodiments of the presentinvention, the level of an off current of the thin film transistor doesnot increase even when light is irradiated onto the back surface of thesubstrate. This is because, the thin film transistors according to theexemplary embodiments of the present invention, a blocking layer (see,e.g., SDL of FIG. 1) is disposed under and overlaps an active pattern toblock the light from being incident onto the active pattern.

The thin film transistors according to the exemplary embodiments of thepresent invention may be included in various electronic devices, e.g.,display devices. According to an exemplary embodiment of the presentinvention, a display device includes a display element for displaying animage and a thin film transistor connected to the display element, andeach of the thin film transistors according to the exemplary embodimentsof the present invention may be employed as thin film transistor of thedisplay device.

FIG. 7 is a diagram illustrating a display device according to anexemplary embodiment of the present invention.

Referring to FIG. 7, the display device according to an exemplaryembodiment of the present invention may include a scan driver 110, adata driver 120, a pixel unit 130 including pixels PXL, and a timingcontroller 150.

The pixel unit 130 includes pixels PXL located in regions which arearranged with intersections of scan lines S1 to Sn extending in ahorizontal direction and data lines D1 to Dm extending in verticaldirection. Each pixel PXL is connected to a data line D1 to Dm and ascan line S1 to Sn. In FIG. 7, it is illustrated that the pixel unit 130includes m×n pixels PXL. “m” and “n” may be natural numbers. The pixelsPXL are supplied with a first power source ELVDD and a second powersource ELVSS from the outside. In an exemplary embodiment of the presentinvention, the second power source ELVSS may be set to have a lowervoltage than the first power source ELVDD. Pixels PXL are supplied witha data signal in response to a scan signal supplied to the scan lines S1to Sn. Each of the pixels PXL supplied with the data signal generateslight with a predetermined luminance while controlling the amount ofcurrent flowing in the second power source ELVSS via a light emittingdevice OLED from the first power source ELVDD, corresponding to the datasignal. Each of the pixels PXL in the pixel unit 130 shown in FIG. 7 maybe a sub-pixel included in a unit pixel. In other words, each of thepixels PXL may be a sub-pixel that generates light of any one coloramong red, green, and blue, but the present invention is not limitedthereto.

The timing controller 150 generates a data driving control signal DCSand a scan driving control signal SCS, corresponding to synchronizationsignals supplied from the outside (e.g., an external device). The datadriving control signal DCS generated from the timing controller 150 issupplied to the data driver 120, and the scan driving control signal SCSgenerated from the timing controller 150 is supplied to the scan driver110. In addition, the timing controller 150 realigns data supplied fromthe outside and supplies the realigned data Data to the data driver 120.

The scan driving control signal SCS may include start pulses and clocksignals. The start pulses control first timings of a scan signal and alight emitting control signal. The clock signals are used to shift thestart pulses.

The data driving control signal DCS may include a source start pulse andclock signals. The source start pulse controls a sampling start point ofdata. The clock signals are used to control a sampling operation.

The scan driver 110 is supplied with the scan driving control signal SCSfrom the timing controller 150. The scan driver 110 supplied with thescan driving control signal SCS supplies the scan signal to the scanlines S1 to Sn. For example, the scan driver 110 may sequentially supplythe scan signal to the scan lines S1 to Sn. If the scan signal issequentially supplied to the scan lines S1 to Sn, the pixels PXL areselected in units of horizontal lines.

In addition, the scan driver 110 supplied with the scan driving controlsignal SCS supplies a light emitting control signal to light emittingcontrol lines E1 to En extending in the horizontal direction. Forexample, the scan driver 110 may sequentially supply the light emittingcontrol signal to the light emitting control lines E1 to En. The lightemitting control signal is used to control light emitting times of thepixels PXL. To this end, the light emitting control signal may be set tohave a wider width than the scan signal. For example, the scan driver110 may supply the scan signal to an (i−1)th (i is a natural number)scan line Si−1 and an ith scan line Si such that the scan signaloverlaps with the light emitting control signal supplied to an ith lightemitting control line Ei.

The data driver 120 supplies the data signal to the data lines D1 to Dm,corresponding to the data driving control signal DCS. The data signalsupplied to the data lines D1 to Dm is supplied to the pixels PXL thatreceived the scan signal. To this end, the data driver 120 may supplythe data signal to the data lines D1 to Dm such that the data signal issynchronized with the scan signal.

FIG. 8 is a circuit diagram illustrating a pixel PXL shown in FIG. 7according to an exemplary embodiment of the present invention. A pixelPXL located on an ith (i is a natural number smaller than n) row and ajth (j is a natural number smaller than m) column is illustrated in FIG.8.

Referring to FIGS. 7 and 8, the pixel PXL according to an exemplaryembodiment of the present invention may include a light emitting deviceOLED, first to seventh thin film transistors T1 to T7, and a storagecapacitor Cst.

An anode of the light emitting device OLED is connected to the firstthin film transistor T1 via the sixth thin film transistor T6, and thecathode is connected to the second power source ELVSS. The first thinfilm transistor T1 is connected to the first power source ELVDD. Thelight emitting device OLED may generate light with a predeterminedluminance corresponding to the amount of current supplied from the firstpower source ELVDD and through the first thin film transistor T1. Inthis case, the first power source ELVDD may be set to a higher voltagethan the second power source ELVSS such that current may flow in thelight emitting device OLED.

The seventh thin film transistor T7 is located between an initializationpower source Vint and the anode of the light emitting device OLED to beconnected to the initialization power source Vint and the anode of thelight emitting device OLED. A gate electrode of the seventh thin filmtransistor T7 is connected to an (i−1)th scan line Si−1. The sevenththin film transistor T7 is turned on when an (i−1)th scan signal issupplied to the (i−1)th scan line Si−1 to supply a voltage of theinitialization power source Vint to the anode of the light emittingdevice OLED. The initialization power source Vint may be set to a lowervoltage than a data signal, but the present invention is not limitedthereto.

The sixth thin film transistor T6 is located between the first thin filmtransistor T1 and the light emitting device OLED to be connected to eachof the first thin film transistor T1 and the light emitting device OLED.A gate electrode of the sixth thin film transistor T6 is connected to anith light emitting control line Ei. The sixth thin film transistor T6 isturned off when an ith light emitting control signal is supplied to theith light emitting control line Ei, and turned on when no ith lightemitting control signal is supplied to the ith light emitting controlline Ei.

The fifth thin film transistor T5 is located between the first powersource ELVDD and the first thin film transistor T1 to be connected toeach of the first power source ELVDD and the first thin film transistorT1. A gate electrode of the fifth thin film transistor T5 is connectedto the ith light emitting control line Ei. The fifth thin filmtransistor T5 is turned off when the ith light emitting control signalis supplied to the ith light emitting control line Ei, and turned onwhen no ith light emitting control signal is supplied to the ith lightemitting control line Ei.

A first electrode of the first thin film transistor (e.g., a drivingtransistor) T1 is connected to the first power source ELVDD via thefifth thin film transistor T5, and a second electrode of the first thinfilm transistor T1 is connected to the anode of the light emittingdevice OLED via the sixth thin film transistor T6. A gate electrode ofthe first thin film transistor T1 is connected to a first node N1. Thefirst thin film transistor T1 controls the amount of current flowingfrom the first power source ELVDD to the second power source ELVSS viathe light emitting device OLED, corresponding to a voltage of the firstnode N1.

The third thin film transistor T3 is located between the first thin filmtransistor T1 and the first node N1 to be connected to each of the firstthin film transistor T1 and the first node N1. A gate electrode of thethird thin film transistor T3 is connected to an ith scan line Si. Thethird thin film transistor T3 is turned on when an ith scan signal issupplied to the ith scan line Si and the gate electrode of the thirdthin film transistor T3 to allow the second electrode of the first thinfilm transistor T1 to be electrically connected to the first node N1through the third thin film transistor T3. Thus, the first thin filmtransistor T1 can be diode-connected when the third thin film transistorT3 is turned on.

The fourth thin film transistor T4 is located between the first node N1and the initialization power source Vint to be connected to each of thefirst node N1 and the initialization power source Vint. A gate electrodeof the fourth thin film transistor T4 is connected to the (i−1)th scanline Si−1. The fourth thin film transistor T4 is turned on when the(i−1)th scan signal is supplied to the (i−1)th scan line Si−1 and thegate electrode of the fourth thin film transistor T4 to supply a voltageof the initialization power source Vint to the first node N1.

The second thin film transistor (e.g., a switching transistor) T2 islocated between a jth data line Dj and the first thin film transistor T1to be connected to each of the jth data line Dj and the first electrodeof the first thin film transistor T1. A gate electrode of the secondthin film transistor T2 is connected the ith scan line Si. In addition,the second thin film transistor T2 is turned on when the ith scan signalis supplied to the ith scan line Si and the gate electrode of the secondthin film transistor T2 so that the jth data line Dj may be electricallyconnected to the first electrode of the first thin film transistor T1.The second thin film transistor T2 is turned on in response to the ithscan signal provided through the ith scan line Si to perform a switchingoperation of transmitting a data signal provided from the jth data lineDj to the first electrode of the first thin film transistor T1.

The storage capacitor Cst is located between the first power sourceELVDD and the first node N1 to be connected to each of the first powersource ELVDD and the first node N1. The storage capacitor Cst stores avoltage corresponding to a jth data signal and a threshold voltage ofthe first thin film transistor T1.

FIG. 9 is a plan view implementing the pixel of FIG. 8, whichillustrates positions of thin film transistors, according to anexemplary embodiment of the present invention. FIG. 10 is a plan viewillustrating in detail the pixel of FIG. 9 according to an exemplaryembodiment of the present invention. FIG. 11 is a sectional view takenalong line II-II′ of FIG. 10 according to an exemplary embodiment of thepresent invention. In FIGS. 9 to 11, for convenience of description,regarding lines provided to one pixel PXL, one of the scan lines SL1 andSL2 to which a scan signal is applied is designated as a “first scanline SL1,” the other scan line is designated as a “second scan lineSL2.” In addition, a light emitting control line EL, to which a lightemitting control signal is applied, is designated as a “a light emittingcontrol line EL.” Further, a data line DL1 to DL2, to which a datasignal is applied, is designated as a “data line DLL” In addition, apower line PL, to which the first power source ELVDD is applied, isdesignated as a “power line PL.” Further, an initialization power lineIPL, to which the initialization power source Vint is applied, isdesignated as an “initialization power line IPL.” DL2 represents a dataline of an adjacent pixel PXL.

Referring to FIGS. 8 to 11, the display device according to an exemplaryembodiment of the present invention includes a substrate SUB, a lineunit, and pixels PXL.

The substrate SUB may include an insulative material such as glass,organic polymer, or quartz. The substrate SUB may be made of a flexiblematerial to be bendable or foldable. The substrate SUB may be asingle-layered structure or a multi-layered structure.

For example, the substrate SUB may include at least one of polystyrene,polyvinyl alcohol, polymethyl methacrylate, polyethersulfone,polyacrylate, polyetherimide, polyethylene naphthalate, polyethyleneterephthalate, polyphenylene sulfide, polyarylate, polyimide,polycarbonate, triacetate cellulose, and cellulose acetate propionate.However, the material constituting the substrate SUB may be variouslychanged.

The line units provide a signal to each pixel PXL, and includes scanlines SL1 and SL2, a data line DL1, a light emitting control line EL, apower line PL, an initialization power line IPL, and an auxiliary powerline APL.

The scan lines SL1 and SL2 extend in a first direction DR1, and includesa first scan line SL1 and a second scan line SL2, which are sequentiallyarranged along a second direction DR2 intersecting the first directionDR1. In other words, the first scan line SL1 and the second scan lineSL2 are parallel to each other. Scan signals are provided to each of thescan lines SL1 and SL2. An (i−1)th scan signal is applied to the firstscan line SL1, and an ith scan signal is applied to the second scan lineSL2.

The light emitting control line EL extends in the first direction DR1,and may be disposed to be spaced part from the first scan line SL1. Forexample, in a plan view and along the second direction DR2, the lightemitting control line EL may be disposed above the first scan line SL1.A light emitting control signal is applied to the light emitting controlline EL.

The power line PL extends along the second direction DR2, and may bedisposed to be spaced apart from the data line DL1.

The initialization power line IPL extends along the first direction DR1,and may be provided between the second scan line SL2 and a lightemitting control line EL of a pixel on a next row.

The auxiliary power line APL extends along the first direction DR1, andmay be disposed between the light emitting control line EL and the firstscan line SL1. The first power source ELVDD may be applied to theauxiliary power line APL and the power line PL.

Each pixel PXL may include first to seventh thin film transistors T1 toT7, a storage capacitor Cst, a light emitting device OLED, and bridgepatterns BR1 and BR2.

The first thin film transistor T1 includes a first gate electrode GE1, afirst active pattern ACT1, a first source electrode SE1, a first drainelectrode DE1, and a connection line CNL.

The first gate electrode GE1 is connected to a third drain electrode DE3of the third thin film transistor T3 and a fourth drain electrode DE4 ofthe fourth thin film transistor T4. The connection line CNL connectsbetween the first gate electrode GE1 and each of the third drainelectrode DE3 and the fourth drain electrode DE4. The connection lineCNL connects the first gate electrode GE1 to each of the third drainelectrode DE3 and the fourth drain electrode DE4 through second andthird contact holes CH2 and CH3.

In exemplary an embodiment of the present invention, the first activepattern ACT1, the first source electrode SE1, and the first drainelectrode DE1 may be formed of a semiconductor layer which may beundoped or doped with impurities. The source electrode SE1 and the firstdrain electrode DE1 may be formed of a semiconductor layer doped withimpurities, and the first active pattern ACT1 may be formed of asemiconductor layer undoped with impurities.

The first active pattern ACT1 may have a polygonal shape with aplurality of bent portions, and extends along a first direction DR1.From a plan view, the first active pattern ACT1 may partially overlapwith the first gate electrode GE1.

The first source electrode SE1 is connected to one end of the firstactive pattern ACT1, and is connected to each of a second drainelectrode DE2 of the second thin film transistor T2 and a fifth drainelectrode DE5 of the fifth thin film transistor T5. The first drainelectrode DE1 is connected to the other end of the first active patternACT1, and is connected to each of a third source electrode SE3 of thethird thin film transistor T3 and a sixth source electrode SE6 of thesixth thin film transistor T6.

The second thin film transistor T2 includes a second gate electrode GE2,a second active pattern ACT2, a second source electrode SE2, and thesecond drain electrode DE2.

The second gate electrode GE2 is connected to the first scan line SL1.The second gate electrode GE2 may be provided as a portion of the firstscan line SL1, but the present invention is not limited thereto. Forexample, the second gate electrode GE2 may be provided in a shapeprotruding from the first scan line SL1. In an exemplary embodiment ofthe present invention, the second active pattern ACT2, the second sourceelectrode SE2, and the second drain electrode DE2 may be formed of asemiconductor layer which may be undoped or doped with impurities. Thesecond active pattern ACT2 corresponds to a portion of the semiconductorlayer overlapping with the second gate electrode GE2. One end of thesecond source electrode SE2 is connected to one end of the second activepattern ACT2, and the other end of the second source electrode SE2 isconnected to the data line DL1 through a seventh contact hole CH7. Oneend of the second drain electrode DE2 is connected to the other end ofsecond active pattern ACT2, and the other end of the second drainelectrode DE2 is connected to the first source electrode SE1 of thefirst thin film transistor T1 and the fifth drain electrode DE5 of thefifth thin film transistor T5.

The third thin film transistor T3 may be provided as a dual gatestructure to prevent leakage current. In other words, the third thinfilm transistor T3 may include a 3ath thin film transistor T3 a and a3bth thin film transistor T3 b. The 3ath thin film transistor T3 a mayinclude a 3ath gate electrode GE3 a, a 3ath active pattern ACT3 a, a3ath source electrode SE3 a, and a 3ath drain electrode DE3 a. The 3bththin film transistor T3 b may include a 3bth gate electrode GE3 b, a3bth active pattern ACT3 b, a 3bth source electrode SE3 b, and a 3bthdrain electrode DE3 b. Hereinafter, for convenience of description, the3ath gate electrode GE3 a and the 3bth gate electrode GE3 b are referredto as a third gate electrode GE3, the 3ath active pattern ACT3 a and the3bth active pattern ACT3 b are referred to as a third active patternACT3, the 3ath source electrode SE3 a and the 3bth source electrode SE3b are referred to as a third source electrode SE3, and the 3ath drainelectrode DE3 a and the 3bth drain electrode DE3 b are referred to as athird drain electrode DE3.

The third gate electrode GE3 is connected to the first scan line SL1.The third gate electrode GE3 is provided as a portion of the first scanline SL1 or provided in a shape protruding from the first scan line SL1.In exemplary an embodiment of the present invention, the third activepattern ACT3, the third source electrode SE3, and the third drainelectrode DE3 may be formed of a semiconductor layer which may beundoped or doped with impurities. The third source electrode SE3 and thethird drain electrode DE3 may be formed of a semiconductor layer dopedwith impurities, and the third active pattern ACT3 may be formed of asemiconductor layer undoped with impurities. The third active patternACT3 corresponds to a portion of the semiconductor layer overlappingwith the third gate electrode GE3. One end of the third source electrodeSE3 is connected to the third active pattern ACT3, and the other end ofthe third source electrode SE3 is connected to the first drain electrodeDE1 of the first thin film transistor T1 and the sixth source electrodeSE6 of the sixth thin film transistor T6. One end of the third drainelectrode DE3 is connected to the third active pattern ACT3, and theother end of the third drain electrode DE3 is connected to the fourthdrain electrode DE4 of the fourth thin film transistor T4. In addition,the third drain electrode DE3 is connected to the first gate electrodeGE1 of the first thin film transistor T1 through the connection line CNLand the second and third contact holes CH2 and CH3.

The fourth thin film transistor T4 may be provided as a dual gatestructure to prevent leakage current. In other words, the fourth thinfilm transistor T4 may include a 4ath thin film transistor T4 a and a4bth thin film transistor T4 b. The 4ath thin film transistor T4 a mayinclude a 4ath gate electrode GE4 a, a 4ath active pattern ACT4 a, a4ath source electrode SE4 a, and a 4ath drain electrode DE4 a. The 4bththin film transistor T4 b may include a 4bth gate electrode GE4 b, a4bth active pattern ACT4 b, a 4bth source electrode SE4 b, and a 4bthdrain electrode DE4 b. Hereinafter, for convenience of description, the4ath gate electrode GE4 a and the 4bth gate electrode GE4 b are referredto as a fourth gate electrode GE4, the 4ath active pattern ACT4 a andthe 4bth active pattern ACT4 b are referred to as a fourth activepattern ACT4, the 4ath source electrode SE4 a and the 4bth sourceelectrode SE4 b are referred to as a fourth source electrode SE4, andthe 4ath drain electrode DE4 a and the 4bth drain electrode DE4 b arereferred to as a fourth drain electrode DE4.

The fourth gate electrode GE4 is connected to the second scan line SL2.The fourth gate electrode GE4 is provided as a portion of the secondscan line SL2 or provided in a shape protruding from the second scanline SL2. In an exemplary embodiment of the present invention, thefourth active pattern ACT4, the fourth source electrode SE4, and thefourth drain electrode DE4 may be formed of a semiconductor layer whichmay be undoped or doped with impurities. The fourth source electrode SE4and the fourth drain electrode DE4 may be formed of a semiconductorlayer doped with impurities, and the fourth active pattern ACT4 may beformed of a semiconductor layer undoped with impurities. The fourthactive pattern ACT4 corresponds to a portion of the semiconductor layeroverlapping with the fourth gate electrode GE4. One end of the fourthsource electrode SE4 is connected to the fourth active pattern ACT4, andthe other end of the fourth source electrode SE4 is connected to theinitialization power line IPL and a seventh drain electrode DE7 of theseventh thin film transistor T7. Since a second bridge pattern BR2 isprovided between the fourth source electrode SE4 and the initializationpower line IPL, one end of the second bridge pattern BR2 is connected tothe fourth source electrode SE4 through a ninth contact hole CH9, andthe other end of the second bridge pattern BR2 is connected to theinitialization power line IPL through an eighth contact hole CH8. Oneend of the fourth drain electrode DE4 is connected to the fourth activepattern ACT4, and the other end of the fourth drain electrode DE4 isconnected to the third drain electrode DE3 of the third thin filmtransistor T3. In addition, the fourth drain electrode DE4 is connectedto the first gate electrode GE1 of the first thin film transistor T1through the connection line CNL and the second and third contact holesCH2 and CH3.

The fifth thin film transistor T5 includes a fifth gate electrode GE5, afifth active pattern ACT5, a fifth source electrode SE5, and the fifthdrain electrode DE5.

The fifth gate electrode GE5 is connected to the light emitting controlline EL. The fifth gate electrode GE5 is provided as a portion of thelight emitting control line EL or provided in a shape protruding fromthe light emitting control line EL. In an exemplary embodiment of thepresent invention, the fifth active pattern ACT5, the fifth sourceelectrode SE5, and the fifth drain electrode DE5 are formed of asemiconductor layer which may be undoped or doped with impurities. Thefifth source electrode SE5 and the fifth drain electrode DE5 are formedof a semiconductor layer doped with impurities, and the fifth activepattern ACT5 is formed of a semiconductor undoped with impurities. Thefifth active pattern ACT5 corresponds to a portion of the semiconductorlayer overlapping with the fifth gate electrode GE5. One end of thefifth source electrode SE5 is connected to one end of the fifth activepattern ACT5, and the other end of the fifth source electrode SE5 isconnected to the power line PL through a sixth contact hole CH6. One endof the fifth drain electrode DE5 is connected to the other end of thefifth active pattern ACT5, and the other end of the fifth drainelectrode DE5 is connected to the first source electrode SE1 of thefirst thin film transistor T1 and the second drain electrode DE2 of thesecond thin film transistor T2.

The sixth thin film transistor T6 includes a sixth gate electrode GE6, asixth active pattern ACT6, the sixth source electrode SE6, and a sixthdrain electrode DE6.

The sixth gate electrode GE6 is connected to the light emitting controlline EL. The sixth gate electrode GE6 is provided as a portion of thelight emitting control line EL or provided in a shape protruding fromthe light emitting control line EL. In an exemplary embodiment of thepresent invention, the sixth active pattern ACT6, the sixth sourceelectrode SE6, and the sixth drain electrode DE6 are formed of asemiconductor layer which may be doped or undoped with impurities. Thesixth source electrode SE6 and the sixth drain electrode DE6 are formedof a semiconductor layer doped with impurities, and the sixth activepattern ACT6 is formed of a semiconductor layer undoped with impurities.The sixth active pattern ACT6 corresponds to a portion of thesemiconductor layer overlapping with the sixth gate electrode GE6. Oneend of the sixth source electrode SE6 is connected to one end of thesixth active pattern ACT6, and the other end of the sixth sourceelectrode SE6 is connected to the first drain electrode DE1 of the firstthin film transistor T1 and the third source electrode SE3 of the thirdthin film transistor T3. One end of the sixth drain electrode DE6 isconnected to the other end of the sixth active pattern ACT6, and theother end of the sixth drain electrode DE6 is connected to a seventhsource electrode SE7 of a seventh thin film transistor T7 of a pixel ona previous row.

The seventh thin film transistor T7 includes a seventh gate electrodeGE7, a seventh active pattern ACT7, the seventh source electrode SE7,and the seventh drain electrode DE7.

The seventh gate electrode GE7 is connected to the second scan line SL2.The seventh gate electrode GE7 is provided as a portion of the secondscan line SL2 or provided in a shape protruding from the second scanline SL2. In an exemplary embodiment of the present invention, theseventh active pattern ACT7, the seventh source electrode SE7, and theseventh drain electrode DE7 are formed of a semiconductor layer whichmay be undoped or doped with impurities. The seventh source electrodeSE7 and the seventh drain electrode DE7 are formed of a semiconductorlayer doped with impurities, and the seventh active pattern ACT7 isformed of a semiconductor layer undoped with impurities. One end of theseventh active pattern ACT7 corresponds to a portion of thesemiconductor layer overlapping with the seventh gate electrode GE7. Oneend of the seventh source electrode SE7 is connected to one end of theseventh active pattern ACT7, and the other end of the seventh sourceelectrode SE7 is connected to a sixth drain electrode SE6 of a sixththin film transistor T6 of a pixel on a next row. One end of the seventhdrain electrode DE7 is connected to the other end of the seventh activepattern ACT7, and the other end of the seventh drain electrode DE7 isconnected to the initialization power line IPL. The seventh drainelectrode DE7 and the initialization power line IPL may be connected toeach other through the second bridge pattern BR2 and the eighth andninth contact holes CH8 and CH9.

The storage capacitor Cst includes a lower electrode LE and an upperelectrode UE. The upper and lower electrodes UE and LE overlap eachother, for example.

The lower electrode LE of the storage capacitor Cst may be a portion ofthe first gate electrode GE1 of the first thin film transistor T1. Theupper electrode UE of the storage capacitor Cst may be a portion of theauxiliary power line APL. The auxiliary power line APL overlaps with thefirst gate electrode GE. From a plan view, the auxiliary power line APLcovers a majority of the first gate electrode GE1. An area of the upperelectrode UE that overlaps the lower electrode LE and an area of thelower electrode LE that overlaps the upper electrode UE are bothincreased, so that the capacitance of the storage capacitor Cst may beincreased. In other words, the area of the storage capacitor Cst may beincreased. In the auxiliary power line APL corresponding to the upperelectrode UE, an opening OPN is provided in a region in which the secondcontact hole CH2, through which the first gate electrode GE1 and theconnection line CNL are in contact with each other, is provided.

The light emitting device OLED includes an anode electrode AD, a cathodeelectrode CD, and an emitting layer EML provided between the anodeelectrode AD and the cathode electrode CD.

The anode electrode AD is provided in a pixel region corresponding toeach pixel PXL. The anode electrode AD is connected to the seventh drainelectrode DE7 of the seventh thin film transistor T7 and the sixth drainelectrode DE6 of the sixth thin film transistor T6 through a fourthcontact hole CH4 and a fifth contact hole CH5. A first bridge patternBR1 is provided between the fourth contact hole CH4 and the fifthcontact hole CH5 to connect the anode electrode AD to the sixth drainelectrode DE6 and the seventh drain electrode DE7.

In addition, each pixel PXL may further include a blocking layer SDLdisposed to correspond to the third thin film transistor T3.

The blocking layer SDL may include a first blocking layer SDL1 disposedto correspond to the 3ath thin film transistor T3 a of the third thinfilm transistor T3 and a second blocking layer SDL2 disposed tocorrespond to the 3bth thin film transistor T3 b of the third thin filmtransistor T3. The first blocking layer SDL1 and the second blockinglayer SDL2 may be provided on the same layer.

From a plan view, the first blocking layer SDL1 may partially overlapwith the 3ath drain electrode DE3 a of the 3ath thin film transistor T3a. In addition, from a plan view, the first blocking layer SDL1 maypartially overlap with a channel region of the 3ath active pattern ACT3a. In this case, a first drain-channel contact part DCC1 may be disposedbetween the channel region of the 3ath active pattern ACT3 a and the3ath drain electrode DE3 a. The first drain-channel contact part DCC1may be a region partially extending into the channel region of the 3athactive pattern ACT3 a from a point at which the channel region of the3ath active pattern ACT3 a and the 3ath drain electrode DE3 a are incontact with each other. In addition, the first drain-channel contactpart DCC1 may be a portion of the 3ath active pattern ACT3 a overlappingwith the first blocking layer SDL1. The first drain-channel contact partDCC1 may have a width of about 3.5 μm or more.

When light is incident onto the back surface of the substrate SUB, e.g.,the surface on which the 3ath active pattern ACT3 a is not provided, thefirst blocking layer SDL1 may block the light from being incident ontothe first drain-channel contact part DCC1.

From a plan view, the second blocking layer SDL2 may partially overlapwith the 3bth drain electrode DE3 b of the 3bth thin film transistor T3b. In addition, from a plan view, the second blocking layer SDL2 maypartially overlap with a channel region of the 3bth active pattern ACT3b. In this case, a second drain-channel contact part DCC2 may bedisposed between the channel region of the 3bth active pattern ACT3 band the 3bth drain electrode DE3 b. The second drain-channel contactpart DCC2 may be a region partially extending into the channel region ofthe 3bth active pattern ACT3 b from a point at which the channel regionof the 3bth active pattern ACT3 b and the 3bth drain electrode DE3 b arein contact with each other. In addition, the second drain-channelcontact part DCC2 may be a portion of the 3bth active pattern ACT3 boverlapping with the second blocking layer SDL2. The seconddrain-channel contact part DCC2 may have a width of about 3.5 μm ormore.

When light is incident onto the back surface of the substrate SUB, thesecond blocking layer SDL2 can block the light from being incident ontothe second drain-channel contact part DCC2.

The third thin film transistor T3 is connected to one end of the storagecapacitor Cst, and hence, may have direct impact on a voltage stored inthe storage capacitor Cst. Therefore, to prevent characteristics of thethird thin film transistor T3 from being impacted by light incident fromthe back surface of the substrate SUB, the first and second blockinglayers SDL1 and SDL2 may be provided below the third drain electrode DE3(e.g., DE3 b) of third thin film transistor T3 and a channel region ofthe third active pattern ACT3 (e.g., ACT3 a). In addition, the firstblocking layer SDL1 is partially overlapped by the third active patternACT3 (e.g., ACT3 a), and the second blocking layer SDL2 is partiallyoverlapped by the third drain electrode DE3 (e.g., DE3 b).

In addition, a first dummy blocking layer may be provided between the3ath source electrode SE3 a and the channel region of the 3ath activepattern ACT3 a. In addition, a second dummy blocking layer may beprovided between the 3bth source electrode SE3 b and a channel region ofthe 3bth active pattern ACT3 b.

In an exemplary embodiment of the present invention, a case where thefirst and second blocking layers SDL1 and SDL2 are included in the thirdthin film transistor T3 has been described, but the present invention isnot limited thereto. For example, the blocking layer SDL including thefirst and second blocking layers SDL1 and SDL2 may be provided in eachof the first to seventh thin film transistors T1 to T7.

Again, a structure of the display device according to an exemplaryembodiment of the present invention will be described along a stackingorder with reference to FIGS. 8 to 11.

First, the first blocking layer SDL1 and the second blocking layer SDL2are provided on the substrate SUB. The first blocking layer SDL1 and thesecond blocking layer SDL2 may be spaced apart from each other at apredetermined distance. For example, the first and second blockinglayers SDL1 and SDL2 may include a metallic material.

A buffer layer BFL is provided over the first and second blocking layersSDL1 and SDL2 and on the substrate SUB. The buffer layer BFL may be madeof an organic insulating material or inorganic insulating material.

A semiconductor pattern is provided on the buffer layer BFL. Thesemiconductor pattern includes the first to seventh source electrodesSE1 to SE7, the first to seventh drain electrodes DE1 to DE7, and thefirst to seventh active patterns ACT1 to ACT7 of the first to sevenththin film transistors T1 to T7, respectively.

The semiconductor pattern may be divided into first and second parts W1and W2 having different widths from each other by depositing asemiconductor material on the front surface of the buffer layer BFL andthen performing a chemical mechanical polishing (CMP) process. The firstpart W1 may be a region that does not overlap with the first and secondblocking layers SDL1 and SDL2, and the second part W2 may be a regionthat overlaps with the first and second blocking layers SDL1 and SDL2. Athickness of the first part W1 may be greater than that of the secondpart W2.

The channel region of the 3ath active pattern ACT3 a, which partiallyoverlaps with the first blocking layer SDL1, may include the first andsecond parts W1 and W2. The channel region of the 3bth active patternACT3 b, which partially overlaps with the second blocking layer SDL2,may include the first and second parts W1 and W2.

The 3ath drain electrode DE3 a overlapping with the first blocking layerSDL1 may be configured as the second part W2. The 3bth drain electrodeDE3 b partially overlapping with the second blocking layer SDL2 mayinclude all of the first and second parts W1 and W2.

The first drain-channel contact part DCC1 is disposed between thechannel region of the 3ath active pattern ACT3 a and the 3ath drainelectrode DE3 a, and the second drain-channel contact part DCC2 isdisposed between the channel region of the 3bth active pattern ACT3 band the 3bth drain electrode DE3 b. The second drain-channel contactpart DCC2 may have the same width as the first drain-channel contactpart DCC1, but the present invention is not limited thereto. Forexample, the second drain-channel contact part DCC2 may have a differentwidth from that of the first drain-channel contact part DCC1.

A gate insulating layer GI is provided on the substrate SUB on which thesemiconductor pattern is formed.

A gate pattern is provided on the gate insulating layer GI. The gatepattern includes the first scan line SL1, the second scan line SL2, thelight emitting control line EL, and the first to seventh gate electrodesGE1 to GE7. The first gate electrode GE1 is configured to be the lowerelectrode LE of the storage capacitor Cst.

A first insulating layer IL1 is provided on the substrate SUB on whichthe gate pattern is formed. The first insulating layer IL1 may includeany one insulating material selected from an inorganic insulatingmaterial including an inorganic material, and an organic insulatingmaterial including an organic material.

The auxiliary power line APL of the storage capacitor Cst and theinitialization power line IPL are provided on the first insulating layerIL1. The auxiliary power line APL is the upper electrode UE of thestorage capacitor Cst. In other words, the lower electrode LE and theupper electrode UE constitute the storage capacitor Cst with the firstinsulating layer IL1 interposed therebetween.

A second insulating layer IL2 is provided on the substrate SUB on whichthe auxiliary power line APL and the like are formed. The secondinsulating layer IL2 may be made of the same insulating material as thefirst insulating layer IL1, but the present invention is not limitedthereto.

A data pattern is provided on the second insulating layer IL2. The datapattern includes the data line DL1, the power line PL, the connectionline CNL, the first bridge pattern BR1, and the second bridge patternBR2.

The data line DL1 is connected to the second source electrode DE2through the seventh contact hole CH7 that sequentially passes throughthe second insulating layer IL2, the first insulating layer IL1, and thegate insulating layer GI.

The power line PL is connected to the auxiliary power line APL throughthe first contact hole CH1 passing through the second insulating layerIL2. In addition, the power line PL is connected to the fifth sourceelectrode DE5 through the sixth contact hole CH6 sequentially passingthrough the second insulating layer IL2, the first insulating layer IL1,and the gate insulating layer GI.

The connection line CNL is connected to the first gate electrode GE1through the second contact hole CH2 sequentially passing through thesecond insulating layer IL2 and the first insulating layer IL1. Inaddition, the connection line CNL is connected to the third drainelectrode DE3 and the fourth drain electrode DE4 through the thirdcontact hole CH3 sequentially passing through the second insulatinglayer IL2, the first insulating layer ILL and the gate insulating layerGI.

The first bridge pattern BR1 is connected to the sixth drain electrodeDE6 through the fourth contact hole CH4 sequentially passing through thesecond insulating layer IL2, the first insulating layer IL1, and thegate insulating layer GI. In addition, the first bridge pattern BR1 isconnected to the anode electrode AD of the light emitting device OLEDthrough the fifth contact hole CH5.

The second bridge pattern BR2 is connected to the initialization powerline IPL through the eighth contact hole CH8 sequentially passingthrough the second insulating layer IL2 and the first insulating layerIL1. In addition, the second bridge pattern BR2 is connected to thefourth source electrode SE4 and the seventh drain electrode DE7 throughthe ninth contact hole CH9 sequentially passing through the secondinsulating layer IL2, the first insulating layer IL1, and the gateinsulating layer GI.

A protective layer PSV is provided on the substrate SUB on which thedata pattern is formed. For example, the protective layer PSV may bedisposed on the second insulating layer IL2 on which the data pattern isprovided. The anode electrode AD of the light emitting device OLED isprovided on the protective layer PSV

The anode electrode AD may be connected to the first bridge pattern BR1through the fifth contact hole CH5 passing through the protective layerPSV. Since the bridge pattern BR1 is connected to the sixth drainelectrode DE6 and the seventh source electrode SE7 through the fourthcontact hole CH4, the anode electrode AD may be connected to the sixthdrain electrode DE6 and the seventh source electrode SE7.

A pixel defining layer PDL that defines a pixel region to correspond toeach pixel PXL may be provided on the substrate SUB on which the anodeelectrode AD is formed. The pixel defining layer PDL includes an openingthat exposes a top surface of the anode electrode AD, and may protrudefrom the substrate SUB along the border of the pixel PXL.

The emitting layer EML may be provide in the pixel region surrounded bythe pixel defining layer PDL (e.g., the opening), and the cathodeelectrode CD may be provided on the emitting layer EML.

An encapsulation layer SLM that covers the cathode electrode CD may beprovided over the cathode electrode CD.

As described above, in each pixel PXL of the display device according toan exemplary embodiment of the present invention, the first and secondblocking layers SDL1 and SDL2 are provided below the third drainelectrode DE3 of the third thin film transistor T3 and the channelregion of the third active pattern ACT3, so that characteristics of thethird thin film transistor T3 may not be impacted by light incident ontothe back surface of the substrate SUB. Accordingly, a high-resolutiondisplay device may be implemented.

In the display device according to an exemplary embodiment of thepresent invention, the blocking layer SDL provided to block lightincident onto the back surface of the substrate SUB may have variousshapes.

The display device according to an exemplary embodiment of the presentinvention may be employed in various electronic devices. For example,the display device is applicable to televisions, notebook computers,cellular phones, smart phones, smart pads, tablet computers, portablemedia players (PMPs), personal digital assistants (PDAs), navigationdevices, various wearable devices such as smart watches, and the like.

According to the present invention, a thin film transistor capable ofminimizing a leakage current may be provided.

Further, according to the present invention, a method of manufacturingthe thin film transistor is provided.

Further, according to the present invention, a display device having thethin film transistor is provided.

While the present invention has been described with reference toexemplary embodiments thereof, it will be understood by those ofordinary skill in the art that various changes in form and details maybe made thereto without departing from the spirit and scope of thepresent invention as defined by the following claims.

What is claimed is:
 1. A thin film transistor comprising: a firstblocking layer disposed on a substrate; an active pattern disposed onthe first blocking layer, wherein the active pattern includes a sourceregion, a drain region, and a channel region disposed between the sourceregion and the drain region; a gate electrode disposed on the activepattern, wherein the channel region corresponds to a portion of theactive pattern overlapped by the gate electrode; and a source electrodeconnected to the source region, and a drain electrode connected to thedrain region, wherein the active pattern includes a first part and asecond part, wherein the first part partially overlaps with the firstblocking layer, and the first part and the second part have differentthicknesses from each other, wherein the second part of the activepattern does not overlap with the first blocking layer.
 2. The thin filmtransistor of claim 1, wherein a thickness of the first part of theactive pattern is less than a thickness of the second part of the activepattern.
 3. The thin film transistor of claim 1, wherein the drainregion partially overlaps with the first blocking layer.
 4. The thinfilm transistor of claim 3, wherein the active pattern further comprisesa drain-channel contact part disposed between the drain region and thechannel region, wherein the drain-channel contact part overlaps with thefirst blocking layer.
 5. The thin film transistor of claim 4, whereinthe drain-channel contact part is covered by the first blocking layer toblock light that is incident onto a surface of the substrate, on whichthe active pattern is not disposed.
 6. The thin film transistor of claim5, wherein the drain-channel contact part partially extends into thechannel region from a point at which the channel region and the drainregion are in contact with each other.
 7. The thin film transistor ofclaim 6, wherein the drain-channel contact part has a width of about 3.5μm or more.
 8. The thin film transistor of claim 1, further comprising asecond blocking layer partially overlapping with the drain region andthe channel region, and wherein the first blocking layer partiallyoverlaps with the source region and the channel region.
 9. The thin filmtransistor of claim 8, wherein the first blocking layer and the secondblocking layer are disposed in the same layer.
 10. The thin filmtransistor of claim 8, wherein the active pattern further comprises asource-channel contact part disposed between the source region and thechannel region, and a drain-channel contact part disposed between thedrain region and the channel region, wherein the source-channel contactpart overlaps with the first blocking layer, and the drain-channelcontact part overlaps with the second blocking layer.
 11. The thin filmtransistor of claim 10, wherein the source-channel contact part iscovered by the first blocking layer to block light that is incident ontoa surface of the substrate, on which the active pattern is not disposed,and wherein the drain-channel contact part is covered by the secondblocking layer to block light that is incident onto the first surface ofthe substrate.
 12. The thin film transistor of claim 11, wherein thesource-channel contact part partially extends into the channel regionfrom a point at which the channel region and the source region are incontact with each other, and wherein the drain-channel contact partpartially extends into the channel region from a point at which thechannel region and the drain region are in contact with each other. 13.The thin film transistor of claim 12, wherein each of the source-channelcontact part and the drain-channel contact part has a width of about 3.5μm or more.
 14. The thin film transistor of claim 1, wherein the firstblocking layer overlaps with the channel region, the source region, andthe drain region.
 15. The thin film transistor of claim 1, wherein thefirst blocking, layer includes a metal.
 16. A thin film transistorcomprising: first blocking layer disposed on a substrate; an activepattern disposed on the first blocking layer, wherein the active patternincludes a source region, a drain region, and a channel region disposedbetween the source region and the drain region; a gate electrodedisposed on the active pattern, wherein the channel region correspondsto a portion of the active pattern overlapped by the gate electrode; anda source electrode connected to the source region, and a drain electrodeconnected to the drain region, wherein the active pattern includes afirst part and a second part, wherein the first part partially overlapswith the first blocking layer, wherein a thickness of the first part ofthe active pattern extending from a first edge of the first blockinglayer to a second edge of the first blocking layer is constant and lessthan a thickness of the second part of the active pattern.
 17. The thinfilm transistor of claim 16, wherein the second part of the activepattern does not overlap with the first blocking layer.
 18. The thinfilm transistor of claim 16, wherein the drain region partially overlapswith the first blocking layer.
 19. The thin film transistor of claim 18,wherein the active pattern further comprises a drain-channel contactpart disposed between the drain region and the channel region, whereinthe drain-channel contact part overlaps with the first blocking layer.20. The thin film transistor of claim 19, wherein the drain-channelcontact part is covered by the first blocking layer to block light thatis incident onto a surface of the substrate, on which the active patternis not disposed.
 21. The thin film transistor of claim 20, wherein thedrain-channel contact part partially extends into the channel regionfrom a point at which the channel region and the drain region are incontact with each other.
 22. The thin film transistor of claim 21,wherein the drain-channel contact part has a width of about 3.5 μm ormore.
 23. The thin film transistor of claim 16, further comprising asecond blocking layer partially overlapping with the drain region andthe channel region, and wherein the first blocking layer partiallyoverlaps with the source region and the channel region.
 24. The thinfilm transistor of claim 23, wherein the first blocking layer and thesecond blocking layer are disposed in the same layer.
 25. The thin filmtransistor of claim 23, wherein the active pattern further comprises asource-channel contact part disposed between the source region and thechannel region, and a drain-channel contact part disposed between thedrain region and the channel region, wherein the source-channel contactpart overlaps with the first blocking layer, and the drain-channelcontact part overlaps with the second blocking layer.
 26. The thin filmtransistor of claim 25, wherein the source-channel contact part iscovered by the first blocking layer to block light that is incident ontoa surface of the substrate, on which the active pattern is not disposed,and wherein the drain-channel contact part is covered by the secondblocking layer to block light that is incident onto the first surface ofthe substrate.
 27. The thin film transistor of claim 26, wherein thesource-channel contact part partially extends into the channel regionfrom a point at which the channel region and the source region are incontact with each other, and wherein the drain-channel contact partpartially extends into the channel region from a point at which thechannel region and the drain region are in contact with each other. 28.The thin film transistor of claim 27, wherein each of the source-channelcontact part and the drain-channel contact part has a width of about 3.5μm or more.
 29. The thin film transistor of claim 16, wherein the firstblocking layer overlaps with the channel region, the source region, andthe drain region.
 30. The thin film transistor of claim 16, wherein thefirst blocking layer includes a metal.